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At AdValue Technology, we offer high quality diamond substrates which excel in the most demanding applications – from precision tools to cutting-edge electronics.
With a unique combination of mechanical strength, thermal properties, and electrical performance, our diamond substrates are engineered to meet the rigorous standards of today’s most advanced industries.
The unmatched properties make diamond substrates ideal for high-performance electronics, thermal management systems, optical applications, and radiation detection.
Thermal Conductivity W/(m∙K) | Moh’s Hardness | Thermal Expansion Coefficient (106/K) | |
|---|---|---|---|
| Silicon Carbide | 490 | 9.5 | 4.5 |
| Cu | 400 | 3 | 18 |
| Diamond | 1800-2000 | 10 | 1 |
Diamond’s exceptional thermal conductivity and extremely low thermal expansion make it the ideal material for advanced heat spreader applications.
| Type | Single Crystal (HPHT/CVD) |
| Thermal conductivity | >2000 W/m K |
| Size Available | 0.15*0.15~25*25 mm |
| Thickness | 0.1~1.0 mm |
| Tolerance | +/-0.05 mm |
| Face Orientation | (100)/(111) |
| Off Angle | <1° |
| Roughness | Ra<1 nm |
| Coefficient of Thermal Expansion at 25°C | 1.0*10-6/°C |
| Type | Polycrystalline |
| Thermal conductivity | >1500W/m K |
| Size Available | 0~75 mm |
| Thickness | 0.2~2.0 mm |
| Tolerance | +/-0.05 mm |
| Roughness | Ra<10 nm |
| Coefficient of Thermal Expansion at 25°C | 1.0*10-6/°C |
| Thermal conductivity | >700W/m K |
| Size Available | 0~57 mm |
| Thickness | 0~5.0 mm |
| Tolerance | +/-0.05 mm |
| Roughness | Ra<50 nm |
| Coefficient of Thermal Expansion at 25°C | 2.0~2.2.0*10-6/°C |
| Conductivity | Conductive |
Diamond windows offer superior heat dissipation and greater bandwidth compared to traditional materials like sapphire and Boron Nitride. They enable longer part life, lower energy loss and lighter designs.
| Type | Single Crystal/Polycrystalline |
| Size Available | 0~25 mm/75 mm |
| Thickness | 0.1~2.0 mm |
| Spectral Transparency | >70% (225 nm to Far IR） |
| Refractive Index | 2.38 (IR range) |
| Dielectric Constant | 5.7 |
| Loss Tangent | <5*10-5 |
| Roughness | Ra<10 nm |
| Thermal Conductivity | >2000/>1500 W/(m·K) |
| Type | 220 GHz, 340 GHz, 660 GHz, 850 GHz, etc. |
| Size Available | Dia 0.5 mm~25 mm |
| S Parameter | S21 ≥-1.5 dB, S11 ≤-15 dB @220 GHz |
| Bandwidth | ≥20 GHz @220 GHz |
| Vacuum Degree | <1*10-10 Pa/m3-s |
| Dielectric Constant | 5.7 |
| Loss Tangent | <5*10-5 |
| Thermal Conductivity | >2000 W/(m·K) |
Diamond single crystals are ideal for semiconductor, detector, and quantum sensing technologies due to diamond’s many unique advantages, including wide bandgap, high electron saturation velocity, large carrier mobility, low dielectric constant, and exceptional radiation resistance.
| Type | HPHT | CVD |
| Size | 0.15*0.15~25*25 mm (100) 0.15*0.15~15*15 mm (111) | 0.15~0.15 ~ 22*22 mm |
| Thickness | 0.06~1.0 mm | 0.06~1.0 mm |
| Off Angle | (100)/(111) +/-1° | (100)/(111) +/-1° |
| Roughness | <1 nm | <1 nm |
| FWHM | <50 arcsec | <120 arcsec |
| TTV | <30 µm | <30 µm |
| WARP | <10 µm | <10 µm |
Enhance your next-generation devices with the power of diamond technology.
Contact us today to discuss your application and request a quote.
